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| MCR68-2 Silicon Controlled Rectifiers Reverse Blocking Thyristors * Glass-Passivated Junctions for Greater Parameter Stability and * * * * Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 Amps Device Marking: Logo, Device Type, e.g., MCR68-2, Date Code http://onsemi.com Designed for overvoltage protection in crowbar circuits. SCRs 12 AMPERES RMS 50 VOLTS G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = to +125C, Gate Open) MCR68-2 Symbol VDRM, VRRM 50 ITM IT(RMS) IT(AV) ITSM 300 12 8.0 100 Amps Amps Amps Value Unit Volts A K *40 4 Peak Discharge Current(2) On-State RMS Current (180 Conduction Angles; TC = 85C) Average On-State Current (180 Conduction Angles; TC = 85C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Current (t 1.0 s, TC = 85C) Forward Peak Gate Power (t 1.0 s, TC = 85C) Forward Average Gate Power (t = 8.3 ms, TC = 85C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque 1 Amps 2 3 I2t IGM PGM PG(AV) TJ Tstg -- 40 2.0 20 0.5 - 40 to +125 - 40 to +150 8.0 A2s Amps 1 Watts Watt C 2 3 4 TO-220AB CASE 221A STYLE 3 PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION C in. lb. Device MCR68-2 Package TO220AB Shipping 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, t w is defined as 5 time constants of an exponentially decaying current pulse. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 1 Publication Order Number: MCR68/D MCR68-2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 2.0 60 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25C TJ = 125C -- -- -- -- 10 2.0 A mA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 24 A)(1) (ITM = 300 A, tw = 1 ms)(2) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Gate Non-Trigger Voltage (VD = 12 Vdc, RL = 100 , TJ = 125C) Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) Latching Current (VD = 12 Vdc, IG = 150 mA) Gate Controlled Turn-On Time(3) (VD = Rated VDRM, IG = 150 mA) (ITM = 24 A Peak) VTM -- -- IGT VGT VGD IH IL tgt 2.0 -- 0.2 3.0 -- -- -- 6.0 7.0 0.65 0.40 15 -- 1.0 2.2 -- 30 1.5 -- 50 60 -- mA Volts Volts mA mA s Volts DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125C) Critical Rate-of-Rise of On-State Current IG = 150 mA TJ = 125C dv/dt di/dt 10 -- -- -- -- 75 V/s A/s (1) Pulse duration 300 s, duty cycle 2%. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. (3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. p p http://onsemi.com 2 MCR68-2 Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) I TM, PEAK DISCHARGE CURRENT (AMPS) NORMALIZED PEAK CURRENT 1000 300 200 100 50 20 0.5 ITM tw tw = 5 time constants 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 TC, CASE TEMPERATURE (C) tw, PULSE CURRENT DURATION (ms) Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current Derating P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 TC , MAXIMUM CASE TEMPERATURE ( C) 120 115 110 dc 20 18 Half Wave 14 dc 105 100 95 90 85 80 75 1.0 2.0 5.0 8.0 10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Half Wave 10 8.0 TJ = 125C 4.0 2.0 1.0 2.0 4.0 5.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 10 Figure 3. Current Derating Figure 4. Maximum Power Dissipation http://onsemi.com 3 MCR68-2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k ZJC(t) = RJC * r(t) t, TIME (ms) Figure 5. Thermal Response 10 NORMALIZED GATE TRIGGER CURRENT NORMALIZED GATE TRIGGER VOLTAGE 1.4 VD = 12 Volts RL = 100 5.0 3.0 2.0 1.0 0.5 0.3 0.2 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 VD = 12 Volts RL = 100 1.2 1.0 0.8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage 3.0 NORMALIZED HOLD CURRENT 2.0 VD = 12 Volts ITM = 100 mA 1.0 0.8 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 8. Holding Current http://onsemi.com 4 MCR68-2 PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE Z -T- B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 MCR68-2 Notes http://onsemi.com 6 MCR68-2 Notes http://onsemi.com 7 MCR68-2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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